Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer

An interconnect structure of a semiconductor device includes a tungsten plug ( 14 ) deposited in a via or contact window ( 11 ). A barrier layer ( 15 ) separates the tungsten plug ( 14 ) from the surface of a dielectric material ( 16 ) within which the contact window or via ( 11 ) is formed. The bar...

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Hauptverfasser:	MERCHANT SAILESH MANSINH, BHOWMIK SIDDHARTHA, SIMPSON DARRELL L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	An interconnect structure of a semiconductor device includes a tungsten plug ( 14 ) deposited in a via or contact window ( 11 ). A barrier layer ( 15 ) separates the tungsten plug ( 14 ) from the surface of a dielectric material ( 16 ) within which the contact window or via ( 11 ) is formed. The barrier layer ( 15 ) is a composite of at least two films. The first film formed on the surface of the dielectric material ( 16 ) within the via ( 11 ) is a tungsten silicide film ( 12 ). The second film is a tungsten film ( 13 ) formed on the tungsten silicide film ( 12 ). A tungsten plug ( 14 ) is formed on the tungsten film ( 13 ) to complete interconnect structure. The barrier layer ( 15 ) is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target ( 19 ) from which the tungsten silicide film ( 12 ) is deposited, and a tungsten coil ( 20 ) from which the tungsten film ( 20 ) is deposited.