Chemically assisted mechanical cleaning of MRAM structures

A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RAVKIN MICHAEL, MIKHAYLICHENKO KATRINA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.