Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme

A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a cappi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: M'SAAD HI, LIU WEI, AHN SANG H, HE JIM ZHONGYI, BENCHER CHISTOPHER D, YEH WENDY H, SHEN MEIHUA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator M'SAAD HI
LIU WEI
AHN SANG H
HE JIM ZHONGYI
BENCHER CHISTOPHER D
YEH WENDY H
SHEN MEIHUA
description A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7064078B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7064078B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7064078B23</originalsourceid><addsrcrecordid>eNqNyjsKwkAURuFpLETdwy21EIKKsVUxWArG1nCd_HEGkrlxHq7fBy7A6hTnG6prCW2cfSQEasRTNKAUQNIQd-J7IymQZn8TR9PtqZh91ZO9_QxEbYhdTa2NRsi6iLvnaN84aIMOYzVouA2Y_DpSVBzK_XGOXiqEnjUcYnU559l6leWb3WL5B3kBRqU7dQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme</title><source>esp@cenet</source><creator>M'SAAD HI ; LIU WEI ; AHN SANG H ; HE JIM ZHONGYI ; BENCHER CHISTOPHER D ; YEH WENDY H ; SHEN MEIHUA</creator><creatorcontrib>M'SAAD HI ; LIU WEI ; AHN SANG H ; HE JIM ZHONGYI ; BENCHER CHISTOPHER D ; YEH WENDY H ; SHEN MEIHUA</creatorcontrib><description>A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060620&amp;DB=EPODOC&amp;CC=US&amp;NR=7064078B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060620&amp;DB=EPODOC&amp;CC=US&amp;NR=7064078B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>M'SAAD HI</creatorcontrib><creatorcontrib>LIU WEI</creatorcontrib><creatorcontrib>AHN SANG H</creatorcontrib><creatorcontrib>HE JIM ZHONGYI</creatorcontrib><creatorcontrib>BENCHER CHISTOPHER D</creatorcontrib><creatorcontrib>YEH WENDY H</creatorcontrib><creatorcontrib>SHEN MEIHUA</creatorcontrib><title>Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme</title><description>A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsKwkAURuFpLETdwy21EIKKsVUxWArG1nCd_HEGkrlxHq7fBy7A6hTnG6prCW2cfSQEasRTNKAUQNIQd-J7IymQZn8TR9PtqZh91ZO9_QxEbYhdTa2NRsi6iLvnaN84aIMOYzVouA2Y_DpSVBzK_XGOXiqEnjUcYnU559l6leWb3WL5B3kBRqU7dQ</recordid><startdate>20060620</startdate><enddate>20060620</enddate><creator>M'SAAD HI</creator><creator>LIU WEI</creator><creator>AHN SANG H</creator><creator>HE JIM ZHONGYI</creator><creator>BENCHER CHISTOPHER D</creator><creator>YEH WENDY H</creator><creator>SHEN MEIHUA</creator><scope>EVB</scope></search><sort><creationdate>20060620</creationdate><title>Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme</title><author>M'SAAD HI ; LIU WEI ; AHN SANG H ; HE JIM ZHONGYI ; BENCHER CHISTOPHER D ; YEH WENDY H ; SHEN MEIHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7064078B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>M'SAAD HI</creatorcontrib><creatorcontrib>LIU WEI</creatorcontrib><creatorcontrib>AHN SANG H</creatorcontrib><creatorcontrib>HE JIM ZHONGYI</creatorcontrib><creatorcontrib>BENCHER CHISTOPHER D</creatorcontrib><creatorcontrib>YEH WENDY H</creatorcontrib><creatorcontrib>SHEN MEIHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>M'SAAD HI</au><au>LIU WEI</au><au>AHN SANG H</au><au>HE JIM ZHONGYI</au><au>BENCHER CHISTOPHER D</au><au>YEH WENDY H</au><au>SHEN MEIHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme</title><date>2006-06-20</date><risdate>2006</risdate><abstract>A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US7064078B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T20%3A14%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=M'SAAD%20HI&rft.date=2006-06-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7064078B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true