Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a cappi...
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creator | M'SAAD HI LIU WEI AHN SANG H HE JIM ZHONGYI BENCHER CHISTOPHER D YEH WENDY H SHEN MEIHUA |
description | A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate. |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
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