Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme

Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme

A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a cappi...

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Bibliographische Detailangaben
Hauptverfasser: M'SAAD HI, LIU WEI, AHN SANG H, HE JIM ZHONGYI, BENCHER CHISTOPHER D, YEH WENDY H, SHEN MEIHUA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.