Method for manufacturing semiconductor device

In a method for manufacturing a semiconductor device, a gate insulating film and a gate electrode are first formed on a substrate. Next, Ge ions, Si ions, or the like are implanted to make the surface of the substrate amorphous, using the gate electrode as a mask. Thereafter, impurities such as B ions or the like, for forming a doped region, are implanted into the amorphous area of the substrate, using the gate electrode as a mask. Furthermore, the doped region is irradiated with visible light for a short period of time.