Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors

Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors

A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.

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Bibliographische Detailangaben
Hauptverfasser: LEE HYUN K, STAMPER ANTHONY K, LEVINE ERNEST N, BIERY GLENN A, MCDONALD ANN, GAMBINO JEFFREY P, IVERS THOMAS H, BARTH EDWARD P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.