Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same

A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI la...

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Bibliographische Detailangaben
1. Verfasser: HUSHER JOHN DURBIN
Format: Patent
Sprache:eng
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