Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same

Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same

A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI la...

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Bibliographische Detailangaben
1. Verfasser: HUSHER JOHN DURBIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the substrate region. Finally, the method and system includes oxidizing the slot except at the bottom of the slot and providing a metal within the slot.