Methods of controlling gate electrode doping, and systems for accomplishing same

The present invention is generally directed to various methods of controlling gate electrode doping, and various systems for accomplishing same. In one illustrative embodiment, the method disclosed herein comprises performing at least one process operation to form a doped layer of gate electrode material, measuring a sheet resistance of the doped layer of gate electrode material and adjusting at least one parameter of at least one process if the measured sheet resistance does not fall within acceptable limits. In one embodiment, the system is comprised of a process tool for performing at least one process operation to form a doped layer of gate electrode material, a metrology tool for measuring a sheet resistance of the doped layer of gate electrode material and a controller for adjusting at least one parameter of at least one process operation if the measured sheet resistance of the doped layer of gate electrode material does not fall within acceptable limits.