Semiconductor component and method for precluding stress-induced void formation in the semiconductor component
A semiconductor component having a feature suitable for inhibiting stress induced void formation and a method for manufacturing the semiconductor component. A semiconductor substrate is provided having a major surface. A layer of dielectric material is formed over the major surface. A metallization...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor component having a feature suitable for inhibiting stress induced void formation and a method for manufacturing the semiconductor component. A semiconductor substrate is provided having a major surface. A layer of dielectric material is formed over the major surface. A metallization system is formed over the layer of dielectric material, wherein the metallization system includes a portion having gaps or apertures which inhibit stress induced void formation. |
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