Process for producing silica-based film, silica-based film, insulating film, and semiconductor device

Process for producing silica-based film, silica-based film, insulating film, and semiconductor device

A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si-C-Si is disclosed. The fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUMIYA KOUJI, SHIOTA ATSUSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si-C-Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.