Mask for improving lithography performance by using multi-transmittance photomask

Materials and methods for fabricating multi-transmittance halftone phase shift masks (HTPSM) are disclosed. The masks include patterns having regions of different transmittance for the purpose of reducing one or more of line edge shortening, iso-to-dense bias, and edge-to-dense bias. The masks emplo...

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1. Verfasser: YANG CHIHNG
Format: Patent
Sprache:eng
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Zusammenfassung:Materials and methods for fabricating multi-transmittance halftone phase shift masks (HTPSM) are disclosed. The masks include patterns having regions of different transmittance for the purpose of reducing one or more of line edge shortening, iso-to-dense bias, and edge-to-dense bias. The masks employ at least one halftone material in forming the patterns that have different transmittances. Regions of denser or longer lines are constructed to have a lower transmittance than regions of isolated lines. The patterns may include a single halftone material of different thicknesses for different regions or may include two halftone materials applied singly and doubly to different regions.