Method and system for single ion implantation

This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for constructio...

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Bibliographische Detailangaben
Hauptverfasser:	DZURAK ANDREW STEVEN, PRAWER STEVEN, CLARK ROBERT GRAHAM, JAMIESON DAVID NORMAN, YANG CHANGYI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.