Method for evaluating lithography process margins

Setting values of a light exposure and a focus position are set in an exposure process for forming a pattern on a substrate. Pseudo measured dimensions of the pattern are calculated with respect to each of the combinations of the setting values. ED-trees and a plurality of margin curves are calculat...

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Bibliographische Detailangaben
1. Verfasser:	MIMOTOGI SHOJI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Setting values of a light exposure and a focus position are set in an exposure process for forming a pattern on a substrate. Pseudo measured dimensions of the pattern are calculated with respect to each of the combinations of the setting values. ED-trees and a plurality of margin curves are calculated based on the pseudo measured dimensions with respect to each of the combinations. A dispersion of a tolerance of the light exposure of the margin curves is calculated at a depth of focus corresponding to a maximum difference in height of the substrate.