Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same

Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same

The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetores...

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Bibliographische Detailangaben
1. Verfasser: KOGANEI AKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S 1 of the first magnetic layer and a base area S 2 of the second magnetic layer is S 1 >S 2.