Method of preventing resist poisoning in dual damascene structures

Method of preventing resist poisoning in dual damascene structures

A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A se...

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Bibliographische Detailangaben
Hauptverfasser: HU RONGXIANG, ZHANG KAI, CHAO KEITH, EDA MASAICHI, TAKIKAWA HIROAKI, DOU SHUMAY, NEUMAN SARAH, KIM YONGBAE, SCHOENBORN PHILIPPE, VIJAY DILIP, LEE SANG-YUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.