Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structure
A continuous contact hole is formed in an insulation layer that separates a storage capacitor from a switching transistor. All except a section of the contact hole is filled with poly-Si. A conductive, oxidizable interlayer and a conductive oxygen barrier layer are deposited on the Poly-Si in the re...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A continuous contact hole is formed in an insulation layer that separates a storage capacitor from a switching transistor. All except a section of the contact hole is filled with poly-Si. A conductive, oxidizable interlayer and a conductive oxygen barrier layer are deposited on the Poly-Si in the remaining section of the contact hole such that the interlayer is completely surrounded by the poly-Si of the contact hole, the insulation layer, and the barrier layer. |
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