Method to improve the uniformity and reduce the surface roughness of the silicon dielectric interface

Method to improve the uniformity and reduce the surface roughness of the silicon dielectric interface

The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region ( 180 ) on the upper surface ( 170 ) of a silicon substrate prior to forming the dielectric layer on the u...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: ROTONDARO ANTONIO L. P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region ( 180 ) on the upper surface ( 170 ) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.