Method for fabricating an integrated semiconductor component

A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is applied by a conformal deposition metho...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TRUEBY ALEXANDER, WICH-GLASEN ANDREAS, MOLL HANS-PETER
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is applied by a conformal deposition method at least to the back surface of the semiconductor component.