Method of manufacturing storage nodes of a semiconductor memory device using a two-step etching process

A method and semiconductor memory device are provided for manufacturing storage nodes using wet etching and dry etching including, when removing a silicon oxide layer including storage nodes, wet etching a portion of the silicon oxide layer using a buffered oxide etchant ("BOE") solution or a hydrogen fluoride ("HF") solution, and dry etching the remaining silicon oxide layer using a mixed gas of anhydrous HF, isopropyl alcohol ("IPA") and vapor to thereby prevent short circuits caused by fallen storage nodes in the semiconductor memory device.