Test structure for determining a short circuit between trench capacitors in a memory cell array

A test structure allows determining a short circuit between trench capacitors in a memory cell array in which the trench capacitors are arranged in matrix form. The test structure has, in two rows of trench capacitors, a connection of the trench capacitors of each row by tunnel structures and/or bri...

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Bibliographische Detailangaben
Hauptverfasser: FELBER ANDREAS, ROSSKOPF VALENTIN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A test structure allows determining a short circuit between trench capacitors in a memory cell array in which the trench capacitors are arranged in matrix form. The test structure has, in two rows of trench capacitors, a connection of the trench capacitors of each row by tunnel structures and/or bridge structures. A contact area for contact connection is provided at each end section of a trench capacitor row.