Electron beam proximity exposure apparatus and mask unit therefor

In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	UTSUMI TAKAO, SHIMAZU NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.