Method and apparatus for precursor delivery utilizing the melting point depression of solid deposition precursors in the presence of supercritical fluids

A method for providing a precursor to a supercritical processing chamber is provided. The precursor in solid form is provided in an ampoule external to the supercritical processing chamber. A fluid is provided to the ampoule, where at least a portion of the gas enters the solid precursor causing a m...

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Bibliographische Detailangaben
Hauptverfasser:	DALTON JEREMIE, BLACKBURN JASON M
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for providing a precursor to a supercritical processing chamber is provided. The precursor in solid form is provided in an ampoule external to the supercritical processing chamber. A fluid is provided to the ampoule, where at least a portion of the gas enters the solid precursor causing a melting point of the precursor to be depressed and thereby causing the solid precursor to melt. The melted precursor is delivered to the supercritical process chamber.