Flash memory cell erase scheme using both source and channel regions

Flash memory cell erase scheme using both source and channel regions

A method of erasing a non-volatile memory includes applying a first potential of first polarity to a control gate; applying a second potential of second polarity to a bulk region, the second potential being an N magnitude; and applying a third potential of second polarity to a source region, the thi...

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Hauptverfasser: RABKIN PETER, CHOU KAING, WANG HSINGYA A
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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creator RABKIN PETER
CHOU KAING
WANG HSINGYA A
description A method of erasing a non-volatile memory includes applying a first potential of first polarity to a control gate; applying a second potential of second polarity to a bulk region, the second potential being an N magnitude; and applying a third potential of second polarity to a source region, the third potential being an M magnitude, wherein the N and M are substantially the same.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title Flash memory cell erase scheme using both source and channel regions
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