Flash memory cell erase scheme using both source and channel regions

Flash memory cell erase scheme using both source and channel regions

A method of erasing a non-volatile memory includes applying a first potential of first polarity to a control gate; applying a second potential of second polarity to a bulk region, the second potential being an N magnitude; and applying a third potential of second polarity to a source region, the thi...

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Bibliographische Detailangaben
Hauptverfasser: RABKIN PETER, CHOU KAING, WANG HSINGYA A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A method of erasing a non-volatile memory includes applying a first potential of first polarity to a control gate; applying a second potential of second polarity to a bulk region, the second potential being an N magnitude; and applying a third potential of second polarity to a source region, the third potential being an M magnitude, wherein the N and M are substantially the same.