Method of forming an integrated circuit thin film resistor
A thin film resistor structure (75) is formed on a dielectric layer (60). A capping layer (90) is formed above said thin film resistor structure (75) and vias (110) are formed in the capping layer (90) using a two step etching process comprising of a dry etch process and a wet etch process. Conducti...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A thin film resistor structure (75) is formed on a dielectric layer (60). A capping layer (90) is formed above said thin film resistor structure (75) and vias (110) are formed in the capping layer (90) using a two step etching process comprising of a dry etch process and a wet etch process. Conductive layers (120) are formed in the vias and form electrical contacts to the thin film resistor structure (75). |
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