Apparatus for ion implantation

An ion implantation apparatus comprises an ion source section (18) for generating ions; an ion implantation section (14) for implanting the ions generated in the ion source section (18), in a substrate (92); a charged particle generator (62) for generating charged particles having a charge opposite...

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Bibliographische Detailangaben
Hauptverfasser:	ITO HIROYUKI, ASECHI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An ion implantation apparatus comprises an ion source section (18) for generating ions; an ion implantation section (14) for implanting the ions generated in the ion source section (18), in a substrate (92); a charged particle generator (62) for generating charged particles having a charge opposite to that of the ions; a beam guide section (24) having an inlet aperture (24a) for accepting the ions from the ion source section (18), an outlet aperture (24b) for delivering the ions into the ion implantation section (18), a guide tube (24c) extending from the inlet aperture (24a) to the outlet aperture (24b), and an introducing section (80) having an opening (82) thereof in an internal surface (24d) of the guide tube (24c), for introducing the charged particles from the charged particle generator (62) into the guide tube (24c); and a shield section (84) located between the opening (82) of the introducing section (80) and the outlet aperture (24b) inside the guide tube (24c). A shield surface (84a) of the shield section (84) blocks the charged particles' reaching the wafer.