Method for examining structures on a semiconductor substrate

The invention is based on a method for examining structures on a semiconductor substrate. The structures are imaged with X-radiation in an X-ray microscope. The wavelength of the X-radiation is established as a function of the thickness of the semiconductor substrate in such a way that both a suitab...

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Bibliographische Detailangaben
Hauptverfasser:	HAMBACH DIRK, SCHNEIDER GERD, NIEMANN BASTIAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES IRRADIATION DEVICES MEASURING NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING
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Beschreibung
Zusammenfassung:	The invention is based on a method for examining structures on a semiconductor substrate. The structures are imaged with X-radiation in an X-ray microscope. The wavelength of the X-radiation is established as a function of the thickness of the semiconductor substrate in such a way that both a suitable transmission of the X-radiation through the semiconductor substrate and a high-contrast image are obtained. As a result, the structures can be observed continuously with short exposure times, high resolution and even while they are in operation.