Test structure for determining a doping region of an electrode connection between a trench capacitor and a selection transistor in a memory cell array

Test structure for determining a doping region of an electrode connection between a trench capacitor and a selection transistor in a memory cell array

A test structure for a memory cell array determines a doping region of an electrode connection that, in a memory cell, connects an inner capacitor electrode of a trench capacitor to an associated selection transistor. The test structure has an electrical contact with a predetermined contact area dis...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FELBER ANDREAS, ROSSKOPF VALENTIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A test structure for a memory cell array determines a doping region of an electrode connection that, in a memory cell, connects an inner capacitor electrode of a trench capacitor to an associated selection transistor. The test structure has an electrical contact with a predetermined contact area disposed between a regular matrix configuration of four trench capacitors.