Device having electrically isolated low voltage and high voltage regions and process for fabricating the device
A device having electrically isolated low voltage and high voltage substrate regions includes low voltage and high voltage trench isolation structures in which a deep portion of the high voltage isolation trench provides electrical isolation in the high voltage regions. The high voltage isolation tr...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A device having electrically isolated low voltage and high voltage substrate regions includes low voltage and high voltage trench isolation structures in which a deep portion of the high voltage isolation trench provides electrical isolation in the high voltage regions. The high voltage isolation trench structures include a shallow portion that is simultaneously formed with the low voltage trench isolation structures. The deep portion of the high voltage isolation trench has a bottom surface and shares a continuous wall surface with the shallow portion that extends from the bottom surface to the principal surface of the substrate. A process for fabricating the device includes the use of a single resist pattern to simultaneously form the low voltage isolation trench structures and the shallow portion of the high voltage isolation structures. |
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