Gas cluster ion beam size diagnostics and workpiece processing

Methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostati...

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Bibliographische Detailangaben
Hauptverfasser:	TORTI RICHARD P, MACK MICHAEL E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement to estimate or monitor cluster ion size distribution either before or during processing of a workpiece. The measured information is displayed and incorporated in automated control of a GCIB processing system.