Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped...

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Bibliographische Detailangaben
Hauptverfasser: THOMPSON BRIAN E, WALLACE STEVE, HSIEH CHUNG-MING, KRUTSICK THOMAS J, JONES BAILEY, DESKO JOHN C
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped layer and having a dielectric layer located on a sidewall thereof. The semiconductor device may further include a conductive material located within the isolation trench and an interconnect that electrically connects the conductive material and the doped layer.