Method for fabrication of emitter of a transistor and related structure

A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next, a doped polysilicon layer is non-conformally deposited over the undoped layer. Thereafter, the steps of conformally depositing an undoped polysilicon layer and non-conformally depositing a doped polysilicon layer are repeated until the emitter window opening is filled. The method can further comprise a step of activating dopants. In another embodiment, an emitter structure is fabricated according to the above method.