Method of fabricating semiconductor memory device and semiconductor memory device driver

Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing char...

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Hauptverfasser: MAENOSONO TOSHIYUKI, TAKAGI HIDEO, HASHIMOTO TATSUYA, ENDA TAKAYUKI, TOGAWA TAIJI
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.