Method for revealing active regions in a SOI structure for DUT backside inspection
Aspects for revealing active regions of a silicon-on-insulator (SOI) circuit for inspection from a backside of a DUT are described. The aspects include etching a substrate layer of an SOI circuit and removing a buried oxide layer beneath the substrate layer. From these steps, active regions beneath...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Aspects for revealing active regions of a silicon-on-insulator (SOI) circuit for inspection from a backside of a DUT are described. The aspects include etching a substrate layer of an SOI circuit and removing a buried oxide layer beneath the substrate layer. From these steps, active regions beneath the buried oxide layer are revealed. |
|---|