Growth-selective structure of light-emitting diode

A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after...

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Hauptverfasser: LAN WEN-HOW, CHEN LUNGIEN, CHIEN FEN-REN
Format: Patent
Sprache:eng
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Zusammenfassung:A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.