Chemical mechanical planarization (CMP) system and method for determining an endpoint in a CMP operation

Chemical mechanical planarization (CMP) system and method for determining an endpoint in a CMP operation

In a method for determining an endpoint in a chemical mechanical planarization (CMP) operation, the concentration of an oxidizing agent in the slurry byproduct generated during the CMP operation is monitored. The endpoint of the CMP operation is determined based on the concentration of the oxidizing...

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Bibliographische Detailangaben
1. Verfasser: SIMON JOSEPH P
Format: Patent
Sprache:eng
Schlagworte:
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Zusammenfassung:In a method for determining an endpoint in a chemical mechanical planarization (CMP) operation, the concentration of an oxidizing agent in the slurry byproduct generated during the CMP operation is monitored. The endpoint of the CMP operation is determined based on the concentration of the oxidizing agent in the slurry byproduct. The concentration of the oxidizing agent in the slurry byproduct may be monitored by diverting the slurry byproduct from a surface of a polishing pad, and measuring an optical property of the slurry byproduct diverted from the surface of the polishing pad. A CMP system configured to implement the method for determining an endpoint also is described.