MOS transistor using mechanical stress to control short channel effects

MOS transistor using mechanical stress to control short channel effects

A transistor using mechanical stress to alter carrier mobility. Voids are formed in one or more of the source, drain, channel or gate regions to introduce tensile or compressive stress to improve short channel effects.

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Bibliographische Detailangaben
Hauptverfasser: ROBERDS BRIAN, DOYLE BRIAN S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor using mechanical stress to alter carrier mobility. Voids are formed in one or more of the source, drain, channel or gate regions to introduce tensile or compressive stress to improve short channel effects.