Low-resistivity microelectromechanical structures with co-fabricated integrated circuits

Low-resistivity microelectromechanical structures with co-fabricated integrated circuits

A microfabricated device includes a substrate having a device layer and substantially filled, isolating trenches; a doped region of material formed by photolithographically defining a region for selective doping of said device layer, selectively doping said region, and thermally diffusing said dopan...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JUNEAU THOR, CLARK WILLIAM A, LEMKIN MARK A, ROESSIG ALLEN W
Format: Patent
Sprache:eng
Schlagworte:
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Beschreibung
Zusammenfassung:A microfabricated device includes a substrate having a device layer and substantially filled, isolating trenches; a doped region of material formed by photolithographically defining a region for selective doping of said device layer, selectively doping said region, and thermally diffusing said dopant; circuits on said device layer formed using a substantially standard circuit technology; and at least one structure trench in the substrate which completes the definition of electrically isolated micromechanical structural elements.