Separation method of semiconductor layer and production method of solar cell

The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face o...

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Bibliographische Detailangaben
Hauptverfasser: UKIYO NORITAKA, IWAKAMI MAKOTO, IWANE MASAAKI, NAKAGAWA KATSUMI, NISHIDA SHOJI, IWASAKI YUKIKO, MIZUTANI MASAKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.