Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells

A ferromagnetic thin-film based digital memory including a memory cell having a bit structure with a nonmagnetic intermediate layer having a memory film of an anisotropic ferromagnetic material on each of the opposite side major surfaces of an intermediate layer with there being a film thickness difference there of at least five percent, or a film effective anisotropy field difference because of different ferromagnetic materials used therefor, or both. An electrically insulative intermediate layer is provided on the memory film across from one intermediate layer major surface, this insulative intermediate layer having a major surface on a side opposite the memory film on which a magnetization reference layer is provided having a relatively fixed magnetization direction. Manipulation circuitry coupled to the bit structure selectively substantially prevents current in at least one direction along a current path through that bit structure, and permit selecting the occurrence of current flow through the bit structure if to be permitted at a selected time.