Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor

Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor

A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a fluorine bearing gas and a carbon bearing ga...

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Bibliographische Detailangaben
Hauptverfasser: ATHAVALE SATISH D, COSTRINI GREG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a fluorine bearing gas and a carbon bearing gas. The method of forming the lower electrode of a capacitor includes simultaneously etching a multilayer barrier and an electrode layer.