Method for fabricating semiconductor device
A peeling film is deposited on an insulating film, which is formed on a semiconductor substrate and has a hole, and on the bottom and the wall of the hole so as not to fill the hole with the peeling film. A resist film is formed over the peeling film so as to fill the hole. A resist pattern is forme...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A peeling film is deposited on an insulating film, which is formed on a semiconductor substrate and has a hole, and on the bottom and the wall of the hole so as not to fill the hole with the peeling film. A resist film is formed over the peeling film so as to fill the hole. A resist pattern is formed by patterning the resist film so as to form an interconnect groove opening around the hole and to allow a portion of the resist film to remain within the hole. The peeling film and the insulating film are etched by using the resist pattern as a mask, so as to form an interconnect groove continuous with the hole in the insulating film. After removing the resist pattern, a remaining portion of the peeling film is removed. |
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