Synthetic free layer structure for MRAM devices

Synthetic free layer structure for MRAM devices

An MRAM cell includes a bottom electrode layer, a magnetic reference layer, an insulating layer, a synthetic free layer, and a top electrode layer. The synthetic free layer includes a first magnetic layer, a ruthenium anti-ferromagnetic coupling layer, and a second magnetic layer. The magnetic refer...

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Bibliographische Detailangaben
1. Verfasser: CROSS RALPH WILLIAM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:An MRAM cell includes a bottom electrode layer, a magnetic reference layer, an insulating layer, a synthetic free layer, and a top electrode layer. The synthetic free layer includes a first magnetic layer, a ruthenium anti-ferromagnetic coupling layer, and a second magnetic layer. The magnetic reference layer and the first and second magnetic layers are fabricated using magnetic materials such as CoFeB, CoFe, or a bilayer of NiFe and CoFe. The first magnetic layer of the synthetic free layer is made thicker than the second magnetic layer of the synthetic free layer for proper operation.