Method for improving adhesion of a low k dielectric to a barrier layer

Method for improving adhesion of a low k dielectric to a barrier layer

A method for improving adhesion of a low k dielectric to a barrier layer. A substrate covered by an insulating layer having copper interconnects is provided. A sealing layer is formed on the copper interconnects and the insulating layer. A plasma treatment is performed on the sealing layer by a reac...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE SHYH-DAR, HSUE CHENIU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for improving adhesion of a low k dielectric to a barrier layer. A substrate covered by an insulating layer having copper interconnects is provided. A sealing layer is formed on the copper interconnects and the insulating layer. A plasma treatment is performed on the sealing layer by a reaction gas including at least one of CO2, NH3, NO2, SiH4, trimethylsilane, and tetramethylsilane. A low k dielectric layer is formed on the sealing layer.