Method for the preparation of ferroelectric semiconductive coating and apparatus for removing environmental air pollutants using this coating and electric power

Disclosed is a method for preparing ferroelectric semiconductive coatings which is capable of coating the ferroelectric semiconductor onto a metal and forming electron-hole pairs on the surface of the ferroelectric semiconductor by using 440 V and 30K~100K Hz alternating current electric energy of a...

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Bibliographische Detailangaben
1. Verfasser:	AHN GIL HONG
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS, ORSURGICAL ARTICLES CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DISINFECTION, STERILISATION, OR DEODORISATION OF AIR HUMAN NECESSITIES HYGIENE INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS, OR SURGICALARTICLES MEDICAL OR VETERINARY SCIENCE METALLURGY METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS INGENERAL PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEPARATION SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	Disclosed is a method for preparing ferroelectric semiconductive coatings which is capable of coating the ferroelectric semiconductor onto a metal and forming electron-hole pairs on the surface of the ferroelectric semiconductor by using 440 V and 30K~100K Hz alternating current electric energy of a high voltage and a high frequency as an energy source, based upon an energy level difference between the semiconductor and the metal, whereby it can exhibit an effective surface reaction in the range of the oxidation and reduction reaction even in the closed space where no ultraviolet irradiation occurs.