Spin-valve magnetic resistance sensor and thin-film magnetic head

A spin-valve magnetic resistance sensor. In one embodiment, the spin-valve magnetic resistance sensor includes a pair of ferromagnetic layers with a non-magnetic layer sandwiched in between. The pair of ferromagnetic layers, the non-magnetic layer and an antiferromagnetic layer are laminated on a su...

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Bibliographische Detailangaben
Hauptverfasser:	NOSE MASATERU, FUKAGAWA TOMOKI, HIKAMI FUMINORI, NISHIDA HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	A spin-valve magnetic resistance sensor. In one embodiment, the spin-valve magnetic resistance sensor includes a pair of ferromagnetic layers with a non-magnetic layer sandwiched in between. The pair of ferromagnetic layers, the non-magnetic layer and an antiferromagnetic layer are laminated on a substrate. The antiferromagnetic layer is formed using an antiferromagnetic material which uses a Pt-Mn-X alloy, Ir-Mn-X alloy, Rh-Mn-X alloy, Ru-Mn-X alloy or Pd-Mn-X alloy. X indicates one or more elements selected from a set consisting of elements of groups IIA, IVA, VA, IIIB and IVB of the periodic table. X is in the range of 0.1 at % to 15 at %.