Aluminum hardmask for dielectric etch

An aluminum hardmask (106, 214) is used for etching a dielectric layer (102, 210). A fluorine-based etch is used that does not etch the aluminum hardmask (106, 210). The aluminum hardmask (106, 214) is then removed by CMP.

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Bibliographische Detailangaben
1. Verfasser:	BRENNAN KENNETH D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An aluminum hardmask (106, 214) is used for etching a dielectric layer (102, 210). A fluorine-based etch is used that does not etch the aluminum hardmask (106, 210). The aluminum hardmask (106, 214) is then removed by CMP.