Method of stacking polycrystalline silicon in process for single crystal production

A process forms a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method. The process comprises placing into a crucible on the bottom a generally polygonal-shaped concentric array of rod-shaped polycrystalline silicon pieces having obliquely cut ends. The method of stacking the polycrystalline silicon pieces in the crucible allows for a denser packing of silicon in the crucible, can be accomplished in a quicker time then conventional packing methods, and has the potential for less damage to the crucible bottom, when comparing to standard packing methods using a size assortment of irregular shaped silicon pieces.