METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A IMPURITY LAYER DISPOSED BETWEEN A NON-DOPED SILICON FILM AND HIGH MELTING-POINT METAL FILM FOR REDUCING SOLID STATE REACTION BETWEEN SAID HIGH MELTING-POINT METAL FILM AND POLYCRYSTAL SILICON FILM

A semiconductor device has a semiconductor substrate and a conductive layer formed above the semiconductor substrate. The conductive layer has a silicon film, a silicide film formed on the silicon film, and a high melting-point metal film formed on the silicide film. The silicon film has a non-doped layer, which does not contain impurities, and an impurity layer which is formed on the non-doped layer and contains impurities. The silicide film is formed on the impurity layer of the silicon film.